• 256K×16低电压超低功耗CMOS静态存储器IS62WV25616BLL

    资料大小: 0.42 MB

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    上传日期: 2017-09-20

    上 传 者: 李倩他上传的所有资料

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    标签:IS62WV25616(1)低功耗(492)存储器(642)

      The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI‘s high-performance CMOStechnology.This highly reliable process coupled with innovaTIve circuit design techniques, yields high-performance and low power consumpTIon devices. When CS1 is HIGH (deselected) or when CS1 is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipaTIon can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable andOutputEnableinputs.TheacTIveLOWWriteEnable(WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV25616ALL/IS62WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).
    256K×16低电压超低功耗CMOS静态存储器IS62WV25616BLL

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